Visualize and measure defects with electron channeling contrast imaging

Compound semiconductors have been used for decades in integrated circuits (ICs), photonics, memory, and power devices to improve performance and overcome physical challenges. As semiconductor adoption extends into new applications, new compound semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), are delivering superior physical properties. The new compound semiconductors are also introducing new manufacturing and analysis challenges. One of the key manufacturing challenges is eliminating or reducing crystalline defects.

Measuring and characterizing crystalline defects require new solutions that aren’t destructive, difficult to implement, or lack the sufficient sensitivity and throughput to support analysis needs.

Thermo Fisher Scientific has developed a high-efficiency workflow using electron channeling contrast imaging (ECCI) on the Thermo Scientific Apreo 2 SEM combined with Thermo Scientific Maps Software for automated data acquisition. This workflow provides an optimal solution for crystalline defect characterization on compound semiconductors to visualize and measure defects to inform yield improvements and device reliability.

In this SPARK webinar, you’ll discover:

• How crystalline defects impact compound semiconductor device manufacturing
• How Electron Channeling Contrast Imaging (ECCI) is an optimal solution for imaging threading dislocation in monocrystals and defect visualization
• Use cases for ECCI and workflows for quickly inspecting large areas, characterizing individual defects, and performing advanced 3D analysis

Run time: 50 minutes

Speaker: