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The increasing complexity of semiconductor device structures, along with the shrinking of structural dimensions, means that designing next-generation devices is more challenging and time-consuming than ever before. This, coupled with the fact that the number of technology and design options available is increasing, means a lower probability that any particular design will be commercially successful. As a result, device manufacturers need reliable tools for pathfinding that reduce the number of viable options available and help them implement solutions faster.
The complexity of considering all the chip, package, and system integration options that exist has made implementation an intimidating task. As a result, continuing evolution of the most advanced pathfinding capability has become a requirement in efficient semiconductor device design. Adding to this level of complexity are structures with multifaceted 3D architectures. Isolating defects or resolving material interfaces in a focused-ion-beam (FIB) cut structural cross-section requires highly precise preparation and subsequent scanning electron microscopy (SEM) or scanning transmission electron microscopy (STEM) imaging. Precision FIB editing tools can also perform microsurgery and nanoprototyping of new circuit designs. Finally, due to limited floorspace and budgets, labs are pushing to have multiple analysis options in a single system to get the most comprehensive data in the shortest possible time.
Thermo Fisher Scientific provides a full suite of analytical instruments that enable advanced R&D on innovative logic, memory, power and display device technologies. We offer the most advanced capability to perform high-end atomic-level research and prototyping, using STEM and FIB microscopy.
TEM Metrology
Advanced and automated TEM metrology routines deliver significantly greater precision than manual methods. This allows users to generate large amounts of statistically relevant data, with sub-angstrom-level specificity, that is free of operator bias.
Semiconductor TEM Imaging and Analysis
Thermo Scientific transmission electron microscopes offer high-resolution imaging and analysis of semiconductor devices, enabling manufacturers to calibrate toolsets, diagnose failure mechanisms, and optimize overall process yields.
Sample Preparation of Semiconductor Devices
Thermo Scientific DualBeam systems provide accurate TEM sample preparation for atomic-scale analysis of semiconductor devices. Automation and advanced machine learning technologies produce high-quality samples, at the correct location, and a low cost per sample.
Semiconductor Analysis and Imaging
Thermo Fisher Scientific offers scanning electron microscopes for every function of a semiconductor lab, from general imaging tasks to advanced failure analysis techniques requiring precise voltage-contrast measurements.
Optical Fault Isolation
Increasingly complex designs complicate fault and defect isolation in semiconductor manufacturing. Optical fault isolation techniques allow you to analyze the performance of electrically active devices to locate critical defects that cause device failure.
Thermal Fault Isolation
Uneven distribution of local power dissipation can cause large, localized increases in temperature, leading to device failure. We offer unique solutions for thermal fault isolation with high-sensitivity lock-in infrared thermography (LIT).
Circuit Edit
Advanced, dedicated circuit edit and nanoprototyping solutions, which combine novel gas-delivery systems with a broad portfolio of chemistries and focused ion beam technology, offer unparalleled control and precision for semiconductor device development.
Nanoprobing
As device complexity increases, so does the number of places defects have to hide. Nanoprobing provides the precise localization of electrical faults, which is critical for an effective transmission electron microscopy failure analysis workflow.
Semiconductor Laser Ablation
Laser ablation provides high-throughput milling of semiconductor devices for imaging and analysis with electron microscopy, while still preserving sample integrity. Access large-volume 3D data and optimize milling conditions to best suit your sample type.
APT Sample Preparation
Atom probe tomography (APT) provides atomic-resolution 3D compositional analysis of materials. Focused ion beam (FIB) microscopy is an essential technique for high-quality, orientation, and site-specific sample preparation for APT characterization.
Device Delayering
Shrinking feature size, along with advanced design and architecture, results in increasingly challenging failure analysis for semiconductors. Damage-free delayering of devices is a critical technique for the detection of buried electrical faults and failures.
TEM Metrology
Advanced and automated TEM metrology routines deliver significantly greater precision than manual methods. This allows users to generate large amounts of statistically relevant data, with sub-angstrom-level specificity, that is free of operator bias.
Semiconductor TEM Imaging and Analysis
Thermo Scientific transmission electron microscopes offer high-resolution imaging and analysis of semiconductor devices, enabling manufacturers to calibrate toolsets, diagnose failure mechanisms, and optimize overall process yields.
Sample Preparation of Semiconductor Devices
Thermo Scientific DualBeam systems provide accurate TEM sample preparation for atomic-scale analysis of semiconductor devices. Automation and advanced machine learning technologies produce high-quality samples, at the correct location, and a low cost per sample.
Semiconductor Analysis and Imaging
Thermo Fisher Scientific offers scanning electron microscopes for every function of a semiconductor lab, from general imaging tasks to advanced failure analysis techniques requiring precise voltage-contrast measurements.
Optical Fault Isolation
Increasingly complex designs complicate fault and defect isolation in semiconductor manufacturing. Optical fault isolation techniques allow you to analyze the performance of electrically active devices to locate critical defects that cause device failure.
Thermal Fault Isolation
Uneven distribution of local power dissipation can cause large, localized increases in temperature, leading to device failure. We offer unique solutions for thermal fault isolation with high-sensitivity lock-in infrared thermography (LIT).
Circuit Edit
Advanced, dedicated circuit edit and nanoprototyping solutions, which combine novel gas-delivery systems with a broad portfolio of chemistries and focused ion beam technology, offer unparalleled control and precision for semiconductor device development.
Nanoprobing
As device complexity increases, so does the number of places defects have to hide. Nanoprobing provides the precise localization of electrical faults, which is critical for an effective transmission electron microscopy failure analysis workflow.
Semiconductor Laser Ablation
Laser ablation provides high-throughput milling of semiconductor devices for imaging and analysis with electron microscopy, while still preserving sample integrity. Access large-volume 3D data and optimize milling conditions to best suit your sample type.
APT Sample Preparation
Atom probe tomography (APT) provides atomic-resolution 3D compositional analysis of materials. Focused ion beam (FIB) microscopy is an essential technique for high-quality, orientation, and site-specific sample preparation for APT characterization.
Device Delayering
Shrinking feature size, along with advanced design and architecture, results in increasingly challenging failure analysis for semiconductors. Damage-free delayering of devices is a critical technique for the detection of buried electrical faults and failures.
As semiconductor devices shrink and become more complex, new designs and structures are needed. High-productivity 3D analysis workflows can shorten device development time, maximize yield, and ensure that devices meet the future needs of the industry.
To ensure optimal system performance, we provide you access to a world-class network of field service experts, technical support, and certified spare parts.