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Semiconductor electrical and physical failure analysis of advanced logic devices
Semiconductor failure analysis plays a crucial role in the development and reliability assessment of semiconductor devices, involving the identification and understanding of electrical, thermal, and mechanical issues.
Semiconductor electrical failure analysis
Thermo Fisher Scientific is the leading provider of electrical failure analysis (EFA) solutions that meet the evolving semiconductor requirements for finding buried defects with shrinking feature size, backside power delivery, and complex 3D integration. EFA techniques have the common end goal of providing the most precise defect characterization and location so that subsequent physical analysis can generate the best possible root cause answer.
Thermo Fisher Scientific’s failure analysis workflows for advanced logic devices
The Thermo Scientific ELITE System uses lock-in thermography (LIT) to provide high-speed, non-destructive defect isolation on the most advanced packaged die. It can identify and localize defects in a wide variety of complex packages in x, y, and z using its high-sensitivity thermal imaging camera. It can localize the defect to within a specific die or interconnect area and is generally followed by some form of decapsulation and analysis at the die level.
For bare or decapsulated die, there is still a need to isolate a particular failing gate within its billions of neighbors, and this task is accomplished by workflows consisting of FIB delayering and nanoprobing applications.
The nProber IV System provides electron beam probing for transistor-level fault localization
The Thermo Scientific Helios 5 PFIB DualBeam and Helios 5 Hydra DualBeam provide proprietary, damage-free, accurate delayering on even the most advanced logic technology nodes.
Following FIB delayering or FIB sample preparation, the probing techniques that are frequently used are a combination of the Thermo Scientific Meridian EX Fault Isolation System's electron beam probing, the Meridian IV System's optical fault isolation, and the Thermo Scientific nProber IV System's physical nanoprobing. These instruments perform accurate and rapid characterization of the defect that can then be passed on to a physical failure analysis (PFA) workflow for root cause analysis.
Semiconductor physical failure analysis
Following electrical characterization and localization, precision root cause analysis is required. As every defect is extremely valuable, it is important that the highest quality analytical data is collected from every sample with the fastest possible time to data. This requires precise, highly repeatable TEM sample preparation using the Thermo Scientific Helios 6 HD FIB-SEM, followed by highly trusted, user-friendly TEM imaging and analysis with the Thermo Scientific Talos TEM and Spectra (S)TEM. The Helios FIB-SEM to Talos or Spectra TEM workflow is now established as the trusted solution for logic failure analysis.
For Research Use Only. Not for use in diagnostic procedures.