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The rapid innovations in advanced 2.5D and 3D packaging, complex interconnect schemes, and higher-performance power devices are creating unprecedented failure localization and analysis challenges. Defective semiconductor devices often show a variation in the local power dissipation, leading to local temperature increases. The Thermo Scientific ELITE System utilizes lock-in IR thermography (LIT) to accurately and efficiently locate these areas of interest and provide non-destructive 3D device insights. The ELITE System’s optics and InSb camera are specifically designed to achieve high localization resolution and sensitivity and solve the most difficult analytical challenges.
LIT, a form of dynamic IR thermography, provides maximum signal-to-noise ratio, increased sensitivity, and higher feature resolution compared to steady-state thermography. It is the ideal solution for the localization and analysis of line shorts, ESD defects, oxide damage, defective transistors, diodes, and device latch-ups. An optional laser scanning microscope enables high-resolution OBIRCH to complement the ELITE System’s thermal analysis capabilities.
The ELITE System is also available in the VX configuration, which provides all the features required for localizing defects in advanced power devices based on Si, SiC, or GaN technologies.
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*Performance may vary depending on sample and specific setup.
Performance, power efficiency, area, and cost are driving packaging innovations. Learn how workflows provide fast, precise, and accurate time-to-data.
Innovation starts with research and development. Learn more about solutions to help you understand innovative structures and materials at the atomic level.
Manufacturing today’s complex semiconductors requires exact process controls. Learn more about advanced metrology and analysis solutions to accelerate yield learnings.
Complex semiconductor device structures result in more places for defects to hide. Learn more about failure analysis solutions to isolate, analyze, and repair defects.
Every electrostatic discharge (ESD) control plan is required to identify devices that are sensitive to ESD. We offer a complete suite of test systems to help with your device qualification requirements.
Novel architectures and materials pose new challenges. Learn how to pinpoint faults and characterize materials, structures, and interfaces.
Display technologies are evolving to improve display quality and light conversion efficiency. Learn how metrology, failure analysis, and characterization solutions provide insights.
Many factors impact yield, performance, and reliability. Learn more about solutions to characterize physical, structural, and chemical properties.
Thermal Fault Isolation
Uneven distribution of local power dissipation can cause large, localized increases in temperature, leading to device failure. We offer unique solutions for thermal fault isolation with high-sensitivity lock-in infrared thermography (LIT).
Thermal Fault Isolation
Uneven distribution of local power dissipation can cause large, localized increases in temperature, leading to device failure. We offer unique solutions for thermal fault isolation with high-sensitivity lock-in infrared thermography (LIT).
To ensure optimal system performance, we provide you access to a world-class network of field service experts, technical support, and certified spare parts.