Automated STEM-EDS Metrology and Characterization of DRAM Capacitors

Capacitors play an essential role in dynamic random-access memory (DRAM) and logic device applications. Measuring the critical dimension (CD) and compositional distribution of the capacitor structure is becoming more challenging due to the increasing scaling and three-dimensional complexity.

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In this webinar, we present a scanning transmission electron microscopy (STEM) based, energy dispersive X-ray spectroscopy (EDS) metrology method enabled by the Thermo Scientific Metrios 6 (S)TEM and its new Ultra-X EDS detector. The Ultra-X EDS detector provides a 4.45 srad solid angle, delivering at least 2x greater data collection efficiency than the previous generations of detectors. High-quality analytical information and fast EDS data collection is provided through improved sensitivity, efficiency, and throughput capabilities.

We present a study on the interfacial diffusion and distribution of high-k material within DRAM capacitors during STEM-EDS data collection. You'll also discover the effect of the electron beam and its impact on metrology characterization. The webinar conclude with a discussion of strategies to optimize EDS data collection with minimal beam damage, high-throughput, and reproducible metrology.

About the speaker

Karthik Gnanasekaran, TEM Applications Engineer

Dr. Karthik Gnanasekaran is a TEM Application Development Engineer for semiconductor applications at Thermo Fisher Scientific. Prior to joining Thermo Fisher Scientific, Karthik was a researcher at Northwestern University, Evanston, IL, USA, developing in situ TEM and TEM automation methods. Karthik received his Ph.D. in Chemistry from Eindhoven University of Technology, the Netherlands.