New method for 3D NAND channel metrology using PFIB-SEM

Manufacturing 3D NAND can be challenging, especially as legacy analysis solutions are not able to accurately measure the critical dimensions of features buried within the device. To overcome the deficiencies of legacy methods, a new solution is needed.

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In this application note, we present the Thermo Scientific Helios 5 PXL PFIB Wafer DualBeam and four methods to acquire ground truth metrology data to advance process development and yield improvements. The three methods discussed are diagonal mill, delayering, 3D reconstruction, and a new method that combines the first two.

While each of these methods provides CD data, the first three have some limitations. To overcome these, a new method combines diagonal mill and delayering to deliver a balance of data volume, time to data, and traceability of local channel variations. The balanced benefits make this new method suitable for different manufacturing stages, including process development, yield enhancement, and process monitoring.

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