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Semiconductor Analysis
Semiconductor Deprocessing
Semiconductor delayering for the detection of buried faults and failures with high throughput.
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The continued trend of shrinking semiconductor features means that failure analysis is more challenging than ever before. Additionally, more advanced designs and complex 3D architectures result in an increasing number of wiring layers, more complex memory cells and more sensitive gate structures.
Due to this reduction in feature dimensions and increase in structure complexity, device delayering is becoming more and more important in detecting electrical faults (as well as other phenomena that contribute to device failure). While damage-free de-processing of single layers is critical, it can also be too time consuming for various industrial and R&D applications.
Thermo Fisher Scientific offers a unique combination of plasma FIB technology and proprietary Thermo Scientific Dx Chemistries, which enable automated and damage-free delayering of semiconductor devices, including 7/5-nm logic samples and 3D NAND memory devices. Automatic de-processing allows you to access buried information for advanced devices that would otherwise be unattainable.
Thermo Fisher Scientific's unique Plasma FIB delayering process complements the nProber IV and Hyperion II, delivering a robust nanoprobing and transistor characterization workflow. These instruments also provide advanced failure analysis of 3D packages, along with a wide range of other large-area focused-ion-beam (FIB) processing applications. See our product pages for more information.
A 200 µm x 200 µm advanced logic device, delayered using a chemical delayering method on a plasma focused ion beam (PFIB) instrument.
Device delayering workflow example
A site delayered with a PFIB down to M1.
A 100 µm x 100 µm delayered site, prepared using a Thermo Scientific Helios G4 PFIB DualBeam.
Metal layer exposed using the PFIB delayering technique.
Site preparation on a die edge using PFIB delayering.
Full-site processing using both thick layer removal and delayering with a PFIB.
A site delayered with a PFIB down to M1.
A 100 µm x 100 µm delayered site, prepared using a Thermo Scientific Helios G4 PFIB DualBeam.
Metal layer exposed using the PFIB delayering technique.
Site preparation on a die edge using PFIB delayering.
Full-site processing using both thick layer removal and delayering with a PFIB.
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