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Semiconductor Analysis
Semiconductor Scanning Electron Microscope Analysis and Imaging
Semiconductor imaging and analysis solutions with scanning electron microscopy, supporting a wide variety of advanced failure analysis applications.
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The miniaturization of semiconductor devices is continuing at an extraordinary rate. In order to accurately develop, characterize, and test these devices, advanced imaging and analysis techniques are needed. From simple, general tasks to advanced failure analysis (FA) techniques that need extremely precise voltage-contrast measurements on complex devices, scanning electron microscopy (SEM) imaging can provide you with a large variety of critical data for your semiconductor manufacturing needs.
For example, higher accelerating voltages are often used to maximize signal and reduce time-to-data. These higher voltages were once acceptable because of the larger structural dimensions found in previous generation devices. However, as feature sizes continue to shrink due to device miniaturization, higher accelerating voltages are no longer appropriate, and lower voltages are necessary to accurately image smaller features. Low kV imaging also allows you to analyze working transistors without impacting their characteristics and helps you resolve layers without interference from the underlying sections. New materials also require low voltage to minimize beam damage.
Thermo Fisher Scientific offers a range of SEM instrumentation, including low-voltage tools ideally suited to analyze the next generation of semiconductor devices. This includes the versatile Thermo Scientific Prisma SEM and Thermo Scientific Quattro SEM, our general-purpose tools available with Thermo Scientific ChemiSEM Technology. We also offer high-quality, and low-kV imaging on the Thermo Scientific Apreo SEM, and high-contrast sub-nanometer imaging on the Thermo Scientific Verios XHR SEM. Please click through to the appropriate product pages below for more information.
SEM imaging and analysis workflow examples
2 kV image of a wire bond, generated using an Apreo SEM with an Everhart-Thornley detector.
5 kV image of a wire bond, generated using an Apreo SEM with a concentric back-scattered (CBS) detector.
Maps overview, collected on the Apreo SEM, of an area mechanically de-processed for electrical probing.
Cross-section of a camera image sensor using a concentric back-scattered (CBS) on the Apreo SEM.
400 V image of a battery catalyst, collected using a Thermo Scientific Verios 5 SEM.
VNAND cross-section image acquired with the Verios SEM, using the in-column detector.
2 kV image of a wire bond, generated using an Apreo SEM with an Everhart-Thornley detector.
5 kV image of a wire bond, generated using an Apreo SEM with a concentric back-scattered (CBS) detector.
Maps overview, collected on the Apreo SEM, of an area mechanically de-processed for electrical probing.
Cross-section of a camera image sensor using a concentric back-scattered (CBS) on the Apreo SEM.
400 V image of a battery catalyst, collected using a Thermo Scientific Verios 5 SEM.
VNAND cross-section image acquired with the Verios SEM, using the in-column detector.
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Electron microscopy services for
semiconductors
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