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All semiconductor integrated circuits (ICs) are subject to environmental electrostatic discharge (ESD) throughout their lifecycles. Designers utilize multiple techniques to protect these sensitive electronic parts from the damage caused by an unintended ESD event. The industry has standardized methods for qualifying parts against a well-defined set of stress criteria, resulting in classifications that are then assigned to the individual parts. These classifications indicate the maximum stress that the part can experience without any latent or catastrophic failure.
Every ESD control plan is required to identify devices in your portfolio that are sensitive to ESD. To accomplish this, you need to classify the level of their sensitivity. A product’s susceptibility to ESD damage depends on its ability to either:
In the past, there were three main classifications based on three different ESD models:
Model | Equivalent circuit | Standard |
---|---|---|
Human body model (HBM) | 100 pF @ 1.5 kΩ | ANSI/ESDA/JEDEC JS-001 |
Charge device model (CDM) | 6.8 pF/55 pF modules | ANSI/ESDA/JEDEC JS-002 |
Machine model (MM) | 200 pF @ 0Ω | ESD STM5.2/JEDEC JESD22A115 |
Recently, MM was eliminated as a standard test method, leaving HBM and CDM as the only ESD models used today.
The most common model for qualifying parts is HBM. This model simulates discharge occurring between a human (e.g. a hand or finger) and a conductor (e.g. a metal rail). For this model, a 100 pF capacitor is discharged through a 1,500 Ω resistor to simulate the waveforms generated by a human body. The typical rise time of the current pulse (ESD) through a shorting wire averages 6 ns (6 x 10-9 s) and is slower for a higher resistance load. The peak current through a short circuit averages 0.67A for a 1000 V pre-charge.
The classifications that are assigned to parts during qualification are based on the maximum voltage stress that the part can survive with no damage (either latent or catastrophic). The following table is per ANSI/ESDA/JEDEC JS-001:
Class | Voltage range |
---|---|
Class 0Z | < 50 V |
Class 0A | 50 V to < 125 V |
Class 0B | 125 V to < 250 V |
Class 1A | 250 V to < 500 V |
Class 1B | 500 V to < 1000 V |
Class 1C | 1000 V to < 2000 V |
Class 2 | 2000 V to < 4000 V |
Class 3A | 4000 V to < 8000 V |
Class 3B | ≥ 8000 V |
In the CDM model, it is the device itself that becomes charged; this is typically induced triboelectrically by sliding out of a tube/bag/sorter/etc. When the charged part contacts a conductor at a different potential (e.g. a tabletop, hand, or metal tool) the device will rapidly discharge to that conductor and may result in subsequent device failure. The length of the discharge may be very short (less than 1 nanosecond), but the peak current can be quite high. The CDM model uses either a 6.8 pF or 55 pF verification module (coin) which simulates a peak current anywhere from 2 to 30 amps. The following table is per ANSI/ESDA/JEDEC JS-002:
Class | Voltage range |
---|---|
Class C0a | < 125 V |
Class C0b | 125 V to < 250 V |
Class C1 | 250 V to < 500 V |
Class C2a | 500 V to < 750 V |
Class C2b | 750 V to < 1000 V |
Class C3 | ≥ 1000 V* |
* Testing above 1000V is not recommended, see Note 3 in the standard.
The standards committees strongly recommend that each component should be fully classified using both HBM and CDM. That means an item may be classified as both Class 2 (HBM) and Class C1 (CDM). These guidelines are typically used to:
Please see our products page for a complete suite of test systems to help with your device qualification requirements.
A descarga eletrostática (ESD) pode danificar pequenas características e estruturas em semicondutores e circuitos integrados. Oferecemos um conjunto abrangente de equipamentos de teste que verifica se os dispositivos atendem aos padrões de conformidade de ESD desejados.
A descarga eletrostática (ESD) pode danificar pequenas características e estruturas em semicondutores e circuitos integrados. Oferecemos um conjunto abrangente de equipamentos de teste que verifica se os dispositivos atendem aos padrões de conformidade de ESD desejados.
À medida que os dispositivos semicondutores encolhem e se tornam mais complexos, há a necessidade de novos desenhos e estruturas. Os fluxos de trabalho de análise 3D de alta produtividade podem reduzir o tempo de desenvolvimento de dispositivos, maximizar o rendimento e garantir que os dispositivos atendam às necessidades futuras do setor.
Para garantir o desempenho ideal do sistema, fornecemos acesso a uma rede de especialistas em serviços de campo, suporte técnico e peças de reposição certificadas.