ELITE System

The rapid innovations in advanced 2.5D and 3D packaging, complex interconnect schemes, and higher-performance power devices are creating unprecedented failure localization and analysis challenges. Defective semiconductor devices often show a variation in the local power dissipation, leading to local temperature increases. The Thermo Scientific ELITE System utilizes lock-in IR thermography (LIT) to accurately and efficiently locate these areas of interest and provide non-destructive 3D device insights. The ELITE System’s optics and InSb camera are specifically designed to achieve high localization resolution and sensitivity and solve the most difficult analytical challenges.

LIT, a form of dynamic IR thermography, provides maximum signal-to-noise ratio, increased sensitivity, and higher feature resolution compared to steady-state thermography. It is the ideal solution for the localization and analysis of line shorts, ESD defects, oxide damage, defective transistors, diodes, and device latch-ups. An optional laser scanning microscope enables high-resolution OBIRCH to complement the ELITE System’s thermal analysis capabilities.

The ELITE System is also available in the VX configuration, which provides all the features required for localizing defects in advanced power devices based on Si, SiC, or GaN technologies.