Style Sheet for Products Table Specifications

All semiconductor integrated circuits (ICs) are subject to environmental electrostatic discharge (ESD) throughout their lifecycles. Designers utilize multiple techniques to protect these sensitive electronic parts from the damage caused by an unintended ESD event. The industry has standardized methods for qualifying parts against a well-defined set of stress criteria, resulting in classifications that are then assigned to the individual parts. These classifications indicate the maximum stress that the part can experience without any latent or catastrophic failure.

Every ESD control plan is required to identify devices in your portfolio that are sensitive to ESD. To accomplish this, you need to classify the level of their sensitivity. A product’s susceptibility to ESD damage depends on its ability to either:

  • dissipate the discharge energy
  • withstand the levels of current

In the past, there were three main classifications based on three different ESD models:

ModelEquivalent circuitStandard
Human body model (HBM)100 pF @ 1.5 kΩANSI/ESDA/JEDEC JS-001
Charge device model (CDM)6.8 pF/55 pF modulesANSI/ESDA/JEDEC JS-002
Machine model (MM)200 pF @ 0ΩESD STM5.2/JEDEC JESD22A115

Recently, MM was eliminated as a standard test method, leaving HBM and CDM as the only ESD models used today.

Human body model

The most common model for qualifying parts is HBM. This model simulates discharge occurring between a human (e.g. a hand or finger) and a conductor (e.g. a metal rail). For this model, a 100 pF capacitor is discharged through a 1,500 Ω resistor to simulate the waveforms generated by a human body. The typical rise time of the current pulse (ESD) through a shorting wire averages 6 ns (6 x 10-9 s) and is slower for a higher resistance load. The peak current through a short circuit averages 0.67A for a 1000 V pre-charge.

The classifications that are assigned to parts during qualification are based on the maximum voltage stress that the part can survive with no damage (either latent or catastrophic). The following table is per ANSI/ESDA/JEDEC JS-001:

ClassVoltage range
Class 0Z< 50 V
Class 0A50 V to < 125 V
Class 0B125 V to < 250 V
Class 1A250 V to < 500 V
Class 1B500 V to < 1000 V
Class 1C1000 V to < 2000 V
Class 22000 V to < 4000 V
Class 3A4000 V to < 8000 V
Class 3B≥ 8000 V

Charged device model

In the CDM model, it is the device itself that becomes charged; this is typically induced triboelectrically by sliding out of a tube/bag/sorter/etc. When the charged part contacts a conductor at a different potential (e.g. a tabletop, hand, or metal tool) the device will rapidly discharge to that conductor and may result in subsequent device failure. The length of the discharge may be very short (less than 1 nanosecond), but the peak current can be quite high. The CDM model uses either a 6.8 pF or 55 pF verification module (coin) which simulates a peak current anywhere from 2 to 30 amps. The following table is per ANSI/ESDA/JEDEC JS-002:

ClassVoltage range
Class C0a< 125 V
Class C0b125 V to < 250 V
Class C1250 V to < 500 V
Class C2a500 V to < 750 V
Class C2b750 V to < 1000 V
Class C3≥ 1000 V*

* Testing above 1000V is not recommended, see Note 3 in the standard.

The standards committees strongly recommend that each component should be fully classified using both HBM and CDM. That means an item may be classified as both Class 2 (HBM) and Class C1 (CDM). These guidelines are typically used to:

  • Develop and measure suitable on-chip protection
  • Enable comparisons between devices (competitive)
  • Provide a system of ESD sensitivity classification to assist in the ESD design and monitoring requirements of the manufacturing and assembly environments
  • Have documented test procedures to ensure reliable and repeatable results

Please see our products page for a complete suite of test systems to help with your device qualification requirements.

 

ESD qualification workflow example

 

 

Techniques

ESDコンプライアンス検査

静電気放電(ESD)により、半導体や集積回路の機能および構造が損傷される可能性があります。私たちは、お客様のデバイスがESDコンプライアンス基準を満たしているか検証するための、包括的な検査装置を提供しています。

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ESDコンプライアンス検査

静電気放電(ESD)により、半導体や集積回路の機能および構造が損傷される可能性があります。私たちは、お客様のデバイスがESDコンプライアンス基準を満たしているか検証するための、包括的な検査装置を提供しています。

詳細はこちら ›

Samples


半導体材料およびデバイスの解析

半導体デバイスが微細化し複雑になるにつれて、新しい設計と構造が必要になります。生産性の高い3D解析ワークフローはデバイス開発時間の短縮や、歩留まりの最大化を実現し、デバイスが業界の将来のニーズを確実に満たすようにします。

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Products

Style Sheet for Instrument Cards Origin

Talos F200E TEM

  • 半導体およびマイクロ電子デバイスの高品質(S)TEMイメージング
  • EDSによる高精度かつ高速な化学特性評価
  • 専用の半導体関連アプリケーション

MK.4TE ESD and Latch-Up Test System

  • 高速リレーベースの動作、最大2,304チャネル
  • 6種類のベクタードライブレベルを備えた高度な装置条件調整
  • 完全に準拠したラッチアップ刺激および装置バイアス

Celestron Test System

  • ウェハーおよびパッケージレベルのTLP検査
  • 高電流TLPパルス生成器
  • 半自動式プローバーと接続可能
  • 直感的に使用できる制御およびレポート生成用ソフトウェア

Orion3 Test System

  • 帯電装置モデルの検査
  • デュアル高分解能カラーカメラ
  • ピッチ0.4 mm未満の検査密度

Pegasus

  • 最新の業界基準に準拠した検査
  • システムレベルのESD 150 pF/330 Ωネットワーク
  • ウェハープローブを介した任意の装置への2ピン接続
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材料科学向けの
半導体

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